MITSUBISHI Nch POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FS10UMA-5A
HIGH-SPEED SWITCHING USE
FS10UMA-5A
OUTLINE DRAWING
10.5MAX.
Dimensions in mm
4.5
3.2
7.0
1.3
16
φ
3.6
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
0.5
2.6
GATE
DRAIN
SOURCE
DRAIN
q
10V DRIVE
q
V
DSS ...............................................................................
250V
q
r
DS (ON) (MAX) .............................................................
0.52Ω
q
I
D .........................................................................................
10A
TO-220
APPLICATION
C
S
Switch for CRT Display monitor
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
250
±20
10
30
10
55
–55 ~ +150
–55 ~ +150
2.0
4.5MAX.
Unit
V
V
A
A
A
W
°C
°C
g
Sep.1998
L = 200µH
Typical value
MITSUBISHI Nch POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
Parameter
Drain-source breakdown voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
GS
= 10V
I
D
= 5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Limits
Min.
250
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
0.40
2.00
9.0
950
90
25
20
25
150
40
0.95
—
Max.
—
±10
1
4.0
0.52
2.60
—
—
—
—
—
—
—
—
—
2.27
Unit
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
V
DD
= 150V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 5A, V
GS
= 0V
Channel to case
Sep.1998
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