200V N-Channel MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Fairchild |
| Parts packaging code | TO-263 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 180 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 10 A |
| Maximum drain current (ID) | 10 A |
| Maximum drain-source on-resistance | 0.36 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 87 W |
| Maximum pulsed drain current (IDM) | 40 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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| FQB10N20 | FQI10N20 | |
|---|---|---|
| Description | 200V N-Channel MOSFET | 200V N-Channel MOSFET |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Fairchild | Fairchild |
| Parts packaging code | TO-263 | TO-262 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 180 mJ | 180 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V |
| Maximum drain current (Abs) (ID) | 10 A | 10 A |
| Maximum drain current (ID) | 10 A | 10 A |
| Maximum drain-source on-resistance | 0.36 Ω | 0.36 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-262AA |
| JESD-30 code | R-PSSO-G2 | R-PSIP-T3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 87 W | 87 W |
| Maximum pulsed drain current (IDM) | 40 A | 40 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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