FQAF34N25 datasheet, PDF - EEWORLD Datasheet

FQAF34N25: Description250V N-Channel MOSFET; CategoryDiscrete semiconductor The transistor; File Size685KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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250V N-Channel MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	TO-3PF
package instruction	TO-3PF, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	21.7 A
Maximum drain current (ID)	21.7 A
Maximum drain-source on-resistance	0.085 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Maximum pulsed drain current (IDM)	86.8 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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