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FMB-32

Description
20 A, 20 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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FMB-32 Overview

20 A, 20 V, SILICON, RECTIFIER DIODE

Schottky Barrier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
With
Heatsink
20V
Electrical Characteristics (Ta = 25°C)
Others
Rth ( j-c) Mass
Remarks Fig.
(°C/ W)
(g)
I
F
(A)
I
R
(mA)
V
R
= V
RM
I
R
(H)
(mA)
V
R
=V
RM,
Ta=100°C
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
V
F
(V)
max per
element
t
rr
(ns)
I
F
/
I
RP
(mA)
max per element max per element
FMB-G12L
FMB-G22H
5.0
10.0
100
200
100
5.0
10.0
5.0
–40 to +150
0.47
7.5
10.0
10.0
2.0
5.0
2.0
3.0
5.0
10.0
35
1 Chip
A
65
4.0
35
100
50
65
2.0
5.5
100
500/500
Center-
tap
C
B
2.1
FMB-22L
20
FMB-22H
FMB-32
FMB-32M
15.0
20.0
30.0
150
200
300
FMB-G12L
5.0
Tc—I
F(AV)
Derating
t /T = 1/6
V
R
=20V
V
F
—I
F
Characteristics
(Typical)
30
10
50
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
100
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
D.C.
T
a
= 125ºC
Reverse Current I
R
(mA)
Forward Current I
F
(A)
4.0
10
100ºC
80
20ms
3.0
t /T = 1/2
t /T= 1/ 3
1
Peak Forward Surge Current
Sinewave
1
60
60ºC
0.1
2.0
1.0
0.01
T
a
= 125ºC
100ºC
60ºC
27ºC
40
0.1
27ºC
20
0
80
90
100
110
120
130
0.001
0.01
0.005
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
30
35
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
FMB-G22H
Tc—I
F(AV)
Derating
10.0
V
R
=20V
V
F
—I
F
Characteristics
(Typical)
50
200
100
10
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
200
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
t /T = 1/2
T
a
= 125ºC
100ºC
Reverse Current I
R
(mA)
10
6.0
t /T= 1/ 3
1
Peak Forward Surge Current
Sinewave
D.C.
Forward Current I
F
(A)
8.0
160
20ms
120
4.0
t /T = 1/6
0.1
2.0
0.01
T
a
= 125ºC
100ºC
60ºC
27ºC
1
60ºC
80
0.1
27ºC
40
0
80
90
100
110
120
130
0.001
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
30
35
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
FMB-22L
10
Tc—I
F(AV)
Derating
V
R
=20V
V
F
—I
F
Characteristics
(Typical)
30
10
50
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
100
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
t /T = 1/2
T
a
= 125ºC
Reverse Current I
R
(mA)
Forward Current I
F
(A)
8
D.C.
t /T = 1/6
10
100ºC
80
20ms
1
6
Peak Forward Surge Current
Sinewave
t /T= 1/ 3
1
60
60ºC
4
0.1
2
0.01
T
a
= 125ºC
100ºC
60ºC
27ºC
40
0.1
27ºC
20
0
80
90
100
110
120
130
0.001
0.01
0.005
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
5
10
15
20
25
30
35
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
3.3
10.0
4.2
2.8
C0.5
Fig.
B
3.3
10.0
4.2
2.8
C0.5
Fig.
C
0.8 2.8 5.0
15.0
9.0
3.3
5.0
4.4 4.0
4.4 4.0
16.9
16.9
0.8
0.8
20.0
1.35
3.9
3.9
1.35
3.5
13.5
±0.5
13.5
±0.5
20.0
±0.5
0.85
5.08
0.45
+0.2
–0.1
0.85
2.54
2.54
0.45
+0.2
–0.1
16.5
±0.5
2.3
3.4
1.0
0.65
–0.1
+0.2
2.4
2.4
5.45
5.45
2.6
80

FMB-32 Related Products

FMB-32 FMB-22L FMB-22H FMB-32M FMB-G12L FMB-G22H
Description 20 A, 20 V, SILICON, RECTIFIER DIODE 10 A, SILICON, RECTIFIER DIODE 15 A, SILICON, RECTIFIER DIODE 10 A, SILICON, RECTIFIER DIODE 5 A, 20 V, SILICON, RECTIFIER DIODE 10 A, 20 V, SILICON, RECTIFIER DIODE
package instruction - R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T2
Reach Compliance Code - unknow unknow - unknow unknow
application - GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE
Configuration - COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - SINGLE SINGLE
Diode component materials - SILICON SILICON - SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code - R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T2
Maximum non-repetitive peak forward current - 100 A 150 A - 100 A 200 A
Number of components - 2 2 - 1 1
Phase - 1 1 - 1 1
Number of terminals - 3 3 - 3 2
Maximum output current - 10 A 15 A - 5 A 10 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified
Maximum reverse recovery time - 0.1 µs 0.1 µs - 0.1 µs 0.1 µs
surface mount - NO NO - NO NO
technology - SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY
Terminal form - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE - SINGLE SINGLE
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