EEWORLDEEWORLDEEWORLD

Part Number

Search
Datasheet >

ZXMN6A09

Showing 28 Results for ZXMN6A09, including ZXMN6A09DN8,ZXMN6A09DN8, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
ZXMN6A09DN8 Zetex Semiconductors 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09DN8 Diodes 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09DN8_07 Zetex Semiconductors 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09DN8TA Diodes 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09DN8TA Diodes Incorporated MOSFET Dl 60V N-Chnl UMOS Download
ZXMN6A09DN8TA Zetex Semiconductors Small Signal Field-Effect Transistor, 4.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Download
ZXMN6A09DN8TC Zetex Semiconductors 3900 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09DN8TC All Sensors mosfet small signal 60v N-chan Download
ZXMN6A09DN8TC Diodes Incorporated MOSFET 60V N-Chan Download
ZXMN6A09G Zetex Semiconductors 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09G Diodes 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09G_07 Zetex Semiconductors 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Download
ZXMN6A09G_15 Diodes 60V N-CHANNEL ENHANCEMENT MODE MOSFET Download
ZXMN6A09GTA Zetex Semiconductors Small Signal Field-Effect Transistor, 5.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 Download
ZXMN6A09GTA Diodes Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 5.4A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 40mΩ @ 8.2A, 10V Maximum power dissipation ( Ta=25°C): 2W Type: N channel N channel, 60V, 7.5A, 40mΩ@10V Download
ZXMN6A09GTA VBsemi Electronics Co. Ltd. N-Channel 60-V (D-S) MOSFET Download
ZXMN6A09GTC Zetex Semiconductors Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 Download
ZXMN6A09GTC Diodes Incorporated Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4 Download
ZXMN6A09K Zetex Semiconductors 7.9 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
ZXMN6A09K Diodes 60V HIGH ACCURACY BUCK/BOOST/BUCK-BOOST LED DRIVER CONTROLLER Download
ZXMN6A09K_07 Zetex Semiconductors 7.9 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Download
ZXMN6A09K_15 Diodes 60V N-CHANNEL ENHANCEMENT MODE MOSFET Download
ZXMN6A09KQTC Diodes Incorporated MOSFET MOSFETBVDSS: 41V-60V Download
ZXMN6A09KQTC Diodes MOSFET N-CH 60V 11.8A TO252 Download
ZXMN6A09KTC Diodes mosfet mosfet N-CH 60v Download
ZXMN6A09KTC Diodes Incorporated MOSFET MOSFET N-CH 60V Download
ZXMN6A09KTC Zetex Semiconductors Power Field-Effect Transistor, 7.3A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3 Download
ZXMN6A09KTC VBsemi Electronics Co. Ltd. N-Channel 60-V (D-S) MOSFET Download
ZXMN6A09 Related Product Datasheets:
Part Number Datasheet
ZXMN6A09DN8 、 ZXMN6A09DN8TA Download Datasheet
ZXMN6A09G 、 ZXMN6A09G_07 Download Datasheet
ZXMN6A09DN8 、 ZXMN6A09DN8_07 Download Datasheet
ZXMN6A09K 、 ZXMN6A09K_07 Download Datasheet
ZXMN6A09K Download Datasheet
ZXMN6A09K_15 Download Datasheet
ZXMN6A09KQTC Download Datasheet
ZXMN6A09KTC Download Datasheet
ZXMN6A09KTC Download Datasheet
ZXMN6A09KTC Download Datasheet
ZXMN6A09 Related Products:
Part Number ZXMN6A09K ZXMN6A09K_07
Description 7.9 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 7.9 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals 2 2
Minimum breakdown voltage 60 V 60 V
Processing package description TO-252, DPAK-3 TO-252, DPAK-3
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 7.9 A 7.9 A
Maximum drain on-resistance 0.0400 ohm 0.0400 ohm
Maximum leakage current pulse 43 A 43 A

Technical ResourceMore

ForumMore

Technical VideoMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Search Index   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Index   4W AA CR CZ D1 GF IE IH K7 OP RU TD WK YS ZQ

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号