Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
X2N7000 | Calogic | N-channel enhancement-mode mos transistor | Download |
X2N7000 | SIPEX | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Download |
X2N7000 | Exar | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Download |
Part Number | Datasheet |
---|---|
X2N7000 、 X2N7000 | Download Datasheet |
X2N7000 | Download Datasheet |
Part Number | X2N7000 | X2N7000 |
---|---|---|
Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
Is it Rohs certified? | incompatible | incompatible |
Reach Compliance Code | unknown | unknown |
Configuration | Single | Single |
Maximum drain current (Abs) (ID) | 0.2 A | 0.2 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 0.4 W | 0.4 W |