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WEDPN8M64V-133B2M

Among 2 related components, WEDPN8M64V-133B2M have related pdf.
Part Number Manufacturer Description Datasheet
WEDPN8M64V-133B2M White Electronic Designs Corporation 8Mx64 Synchronous DRAM Download
WEDPN8M64V-133B2M Microsemi Synchronous DRAM, 8MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219 Download
WEDPN8M64V-133B2M parameters:

Description

Synchronous DRAM, 8MX64, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219

Parametric
Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1667210510
package instructionBGA,
Reach Compliance Codeunknown
access modeFOUR BANK PAGE BURST
Maximum access time5.5 ns
Other featuresAUTO/SELF REFRESH
Spare memory width32
JESD-30 codeS-PBGA-B219
memory density536870912 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width64
Number of functions1
Number of ports1
Number of terminals219
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8MX64
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

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