Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
WED416S8030A | White Electronic Designs Corporation | 2mx16x 4 banks synchronous dram | Download |
WED416S8030A10SI | Microsemi | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, MS-024FA, TSOP2-54 | Download |
WED416S8030A10SI | White Microelectronics | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, TSOP-54 | Download |
WED416S8030A10SI | White Electronic Designs Corporation | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, MS-024FA, TSOP2-54 | Download |
WED416S8030A12SI | White Electronic Designs Corporation | 2mx 16 bits x 4 banks synchronous Dram(83mhz,1M x 16 bits x 4 banks synchronous dynamic ram) | Download |
WED416S8030A12SI | Microsemi | Synchronous DRAM, 8MX16, 8ns, CMOS, PDSO54, MS-024FA, TSOP2-54 | Download |
WED416S8030A12SI | White Microelectronics | Synchronous DRAM, 8MX16, 8ns, CMOS, PDSO54, TSOP-54 | Download |
Part Number | Datasheet |
---|---|
WED416S8030A10SI 、 WED416S8030A10SI 、 WED416S8030A12SI | Download Datasheet |
WED416S8030A10SI 、 WED416S8030A12SI | Download Datasheet |
WED416S8030A 、 WED416S8030A12SI | Download Datasheet |
Part Number | WED416S8030A10SI | WED416S8030A10SI | WED416S8030A12SI |
---|---|---|---|
Description | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, MS-024FA, TSOP2-54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, MS-024FA, TSOP2-54 | Synchronous DRAM, 8MX16, 8ns, CMOS, PDSO54, MS-024FA, TSOP2-54 |
Is it Rohs certified? | incompatible | incompatible | incompatible |
package instruction | MS-024FA, TSOP2-54 | TSOP2, TSOP54,.46,32 | MS-024FA, TSOP2-54 |
Reach Compliance Code | unknown | unknown | unknown |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 7 ns | 7 ns | 8 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 code | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
length | 22.22 mm | 22.22 mm | 22.22 mm |
memory density | 134217728 bit | 134217728 bit | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
memory width | 16 | 16 | 16 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 54 | 54 | 54 |
word count | 8388608 words | 8388608 words | 8388608 words |
character code | 8000000 | 8000000 | 8000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C |
organize | 8MX16 | 8MX16 | 8MX16 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TSOP2 | TSOP2 | TSOP2 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm |
self refresh | YES | YES | YES |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES |
technology | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
Terminal form | GULL WING | GULL WING | GULL WING |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 10.16 mm | 10.16 mm | 10.16 mm |
Is it lead-free? | Contains lead | - | Contains lead |
Maker | Microsemi | - | Microsemi |
Parts packaging code | TSSOP2 | - | TSSOP2 |
Contacts | 54 | - | 54 |
ECCN code | EAR99 | - | EAR99 |