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NVMFD5873NLWFT1G

Among 1 related components, NVMFD5873NLWFT1G have related pdf.
Part Number Manufacturer Description Datasheet
NVMFD5873NLWFT1G ON Semiconductor MOSFET Pwr MOSFET 60V 58A 13mOhm Dual N-CH Download
NVMFD5873NLWFT1G parameters:

Description

MOSFET Pwr MOSFET 60V 58A 13mOhm Dual N-CH

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
Parts packaging codeDFN
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts8
Manufacturer packaging code506BT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)58 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.013 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)107 W
Maximum pulsed drain current (IDM)190 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON

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