Parameter Name | Attribute value |
Brand Name | ON Semiconductor |
Is it lead-free? | Lead free |
Maker | ON Semiconductor(安森美) |
Parts packaging code | DFN |
package instruction | SMALL OUTLINE, R-PDSO-F6 |
Contacts | 8 |
Manufacturer packaging code | 506BT |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 40 mJ |
Shell connection | DRAIN |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 58 A |
Maximum drain current (ID) | 10 A |
Maximum drain-source on-resistance | 0.013 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-F6 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 2 |
Number of terminals | 6 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 107 W |
Maximum pulsed drain current (IDM) | 190 A |
Guideline | AEC-Q101 |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | FLAT |
Terminal location | DUAL |
Transistor component materials | SILICON |