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MMBTA56LT1G

Among 2 related components, MMBTA56LT1G have related pdf.
Part Number Manufacturer Description Datasheet
MMBTA56LT1G ON Semiconductor Rated power: 225mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP PNP, Vceo=-80V, Ic=-500mA Download
MMBTA56LT1G-HFE ON Semiconductor TRANS PNP 80V 0.5A SOT23 Download
MMBTA56LT1G parameters:

Description

额定功率:225mW 集电极电流Ic:500mA 集射极击穿电压Vce:80V 晶体管类型:PNP PNP,Vceo=-80V,Ic=-500mA

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

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