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MM3Z8V2ST1G

Among 1 related components, MM3Z8V2ST1G have related pdf.
Part Number Manufacturer Description Datasheet
MM3Z8V2ST1G ON Semiconductor Maximum power: 300mW Accuracy: ±2% Reverse leakage current: 700nA @ 5V Regulated voltage value (typical value): 8.2V Download
MM3Z8V2ST1G parameters:

Description

最大功率:300mW 精度:±2% 反向漏电流:700nA @ 5V 稳压值(典型值):8.2V

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor(安森美)
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging code477-02
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionON Semiconductor MM3Z8V2ST1G Zener Diode, 8.2V 2% 300 mW SMT 2-Pin SOD-323
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance15 Ω
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.3 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance2.08%
Working test current5 mA

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