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MJD41CRLG

Among 1 related components, MJD41CRLG have related pdf.
Part Number Manufacturer Description Datasheet
MJD41CRLG ON Semiconductor Bipolar Transistors - BJT 6A 100V 20W NPN Download
MJD41CRLG parameters:

Description

Bipolar Transistors - BJT 6A 100V 20W NPN

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionROHS COMPLIANT, PLASTIC, CASE 369C, DPAK-3
Contacts3
Manufacturer packaging code369C
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time10 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1

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