Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRLR7843 | International Rectifier ( Infineon ) | HEXFET Power MOSFET | Download |
IRLR7843 | Kersemi Electronic | High Frequency Synchronous Buck Converters for Computer Processor Power | Download |
IRLR7843 | ISC | Isc N-Channel MOSFET Transistor | Download |
IRLR7843_19 | ISC | Isc N-Channel MOSFET Transistor | Download |
IRLR7843CPBF | International Rectifier ( Infineon ) | mosfet N-CH 30v 161a dpak | Download |
IRLR7843CTRLPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Download |
IRLR7843CTRPBF | International Rectifier ( Infineon ) | mosfet N-CH 30v 161a dpak | Download |
IRLR7843CTRPBF | Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 38nC | Download |
IRLR7843CTRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Download |
IRLR7843HR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Download |
IRLR7843PBF | International Rectifier ( Infineon ) | 30 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Download |
IRLR7843PBF | Infineon | Schottky Diodes u0026 Rectifiers 2a/40V Schottky | Download |
IRLR7843PBF_15 | International Rectifier ( Infineon ) | Simple Drive Requirements | Download |
IRLR7843TR | International Rectifier ( Infineon ) | High Frequency Synchronous Buck Converters for Computer Processor Power | Download |
IRLR7843TR | Infineon | MOSFET N-CH 30V 161A DPAK | Download |
IRLR7843TRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Download |
IRLR7843TRLPBF | International Rectifier ( Infineon ) | mosfet mosft 30v 161a 3.3mohm 34nc log lvl | Download |
IRLR7843TRLPBF | Infineon | —— | Download |
IRLR7843TRPBF | International Rectifier ( Infineon ) | 30 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Download |
IRLR7843TRPBF | International Rectifier(Infineon) | Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 161A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 3.3mΩ @ 15A,10V Maximum power dissipation (Ta=25°C): 140W Type: N-channel N-channel, 30V, 161A, 4mΩ@4.5V | Download |
IRLR7843TRPBF | Infineon | —— | Download |
IRLR7843TRR | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Download |
IRLR7843TRRPBF | International Rectifier ( Infineon ) | mosfet N-CH 30v 161a dpak | Download |
IRLR7843TRRPBF | Infineon | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC | Download |
Part Number | Datasheet |
---|---|
IRLR7843CTRLPBF 、 IRLR7843CTRRPBF 、 IRLR7843HR 、 IRLR7843TRL 、 IRLR7843TRR 、 IRLR7843TRRPBF | Download Datasheet |
IRLR7843TRPBF 、 IRLR7843TRPBF | Download Datasheet |
IRLR7843CPBF 、 IRLR7843CTRPBF | Download Datasheet |
IRLR7843 | Download Datasheet |
IRLR7843TRLPBF | Download Datasheet |
IRLR7843TR | Download Datasheet |
IRLR7843TRRPBF | Download Datasheet |
IRLR7843PBF | Download Datasheet |
Part Number | IRLR7843CTRLPBF | IRLR7843CTRRPBF | IRLR7843HR | IRLR7843TRL | IRLR7843TRR | IRLR7843TRRPBF |
---|---|---|---|---|---|---|
Description | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | mosfet N-CH 30v 161a dpak |
Maker | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
Parts packaging code | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | LEAD FREE, PLASTIC, DPAK-3 |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | compliant | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 1440 mJ | 1440 mJ | 1440 mJ | 1440 mJ | 1440 mJ | 1440 mJ |
Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
Maximum drain current (ID) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
Maximum drain-source on-resistance | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω | 0.0033 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e3 | e3 | e0 | e0 | e0 | e3 |
Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | 260 | 245 | 260 | NOT SPECIFIED | 260 |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum pulsed drain current (IDM) | 620 A | 620 A | 620 A | 620 A | 620 A | 620 A |
surface mount | YES | YES | YES | YES | YES | YES |
Terminal surface | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | TIN LEAD | TIN LEAD | TIN LEAD | MATTE TIN OVER NICKEL |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | 30 | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED | 30 |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Is it lead-free? | Lead free | Lead free | Contains lead | - | - | Lead free |
Is it Rohs certified? | conform to | conform to | incompatible | - | incompatible | conform to |
Certification status | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |