Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRGS14C40L | International Rectifier ( Infineon ) | IGBT with on-chip Gate-Emitter and Gate-Collector clamps | Download |
IRGS14C40L | Infineon | IGBT 430V 20A 125W D2PAK | Download |
IRGS14C40LPBF | International Rectifier ( Infineon ) | 20 A, 370 V, N-CHANNEL IGBT, TO-263AB | Download |
IRGS14C40LPBF | Infineon | Crystals 16MHz 100PPM Tol. AEC-Q200 CRYSTAL | Download |
IRGS14C40LPBF_15 | International Rectifier ( Infineon ) | MOST RUGGED IN INDUSTRY | Download |
IRGS14C40LTRL | International Rectifier ( Infineon ) | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
IRGS14C40LTRLP | International Rectifier ( Infineon ) | IGBT 430V 20A 125W D2PAK | Download |
IRGS14C40LTRLP | Infineon | D-Sub Backshells KIT W/GROMMETS 9P .32" | Download |
IRGS14C40LTRLPBF | International Rectifier ( Infineon ) | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
IRGS14C40LTRLPBF | Infineon | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
IRGS14C40LTRR | International Rectifier ( Infineon ) | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
IRGS14C40LTRRPBF | International Rectifier ( Infineon ) | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
IRGS14C40LTRRPBF | Infineon | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Download |
Part Number | Datasheet |
---|---|
IRGS14C40L 、 IRGS14C40LTRL 、 IRGS14C40LTRLPBF 、 IRGS14C40LTRLPBF 、 IRGS14C40LTRR 、 IRGS14C40LTRRPBF 、 IRGS14C40LTRRPBF | Download Datasheet |
IRGS14C40L 、 IRGS14C40LTRLP | Download Datasheet |
IRGS14C40LTRLP | Download Datasheet |
IRGS14C40LPBF_15 | Download Datasheet |
IRGS14C40LPBF | Download Datasheet |
IRGS14C40LPBF | Download Datasheet |
Part Number | IRGS14C40LTRRPBF | IRGS14C40L | IRGS14C40LTRL | IRGS14C40LTRLPBF | IRGS14C40LTRLPBF | IRGS14C40LTRR | IRGS14C40LTRRPBF |
---|---|---|---|---|---|---|---|
Description | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | IGBT with on-chip Gate-Emitter and Gate-Collector clamps | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB, PLASTIC PACKAGE-3 PIN |
Is it Rohs certified? | conform to | incompatible | incompatible | conform to | conform to | incompatible | conform to |
Maker | Infineon | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | Infineon | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | compliant | compli | compliant | compliant | compliant | compliant | compliant |
Other features | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE | LOW SATURATION VOLTAGE |
Maximum collector current (IC) | 20 A | 20 A | 20 A | 20 A | 20 A | 20 A | 20 A |
Collector-emitter maximum voltage | 370 V | 370 V | 370 V | 370 V | 370 V | 370 V | 370 V |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Gate emitter threshold voltage maximum | 2.2 V | 2.2 V | 2.2 V | 2.2 V | 2.2 V | 2.2 V | 2.2 V |
Gate-emitter maximum voltage | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
JESD-609 code | e3 | e0 | e0 | e3 | e3 | e0 | e3 |
Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 | 225 | 225 | 260 | 260 | 225 | 260 |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W | 125 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum rise time (tr) | 4000 ns | 4000 ns | 4000 ns | 4000 ns | 4000 ns | 4000 ns | 4000 ns |
surface mount | YES | YES | YES | YES | YES | YES | YES |
Terminal surface | MATTE TIN OVER NICKEL | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | Tin/Lead (Sn/Pb) | MATTE TIN OVER NICKEL |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
transistor applications | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION | AUTOMOTIVE IGNITION |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal on time (ton) | 3700 ns | 3700 ns | 3700 ns | 3700 ns | 3700 ns | 3700 ns | 3700 ns |
Parts packaging code | - | D2PAK | D2PAK | D2PAK | - | D2PAK | D2PAK |
Contacts | - | 3 | 3 | 3 | - | 3 | 3 |