Part Number |
IRF9410TRPBF |
IRF9410 |
Description |
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 30mΩ @ 7A, 10V Maximum power dissipation (Ta= 25°C): 2.5W Type: N channel N channel, 30V, 7A (Ta) |
Power MOSFET(Vdss=30V, Rds(on)=0.030ohm) |
Is it Rohs certified? |
conform to |
incompatible |
package instruction |
SMALL OUTLINE, R-PDSO-G8 |
SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code |
compliant |
compli |
ECCN code |
EAR99 |
EAR99 |
Other features |
AVALANCHE RATED, ULTRA LOW RESISTANCE |
HIGH RELIABILITY |
Avalanche Energy Efficiency Rating (Eas) |
70 mJ |
70 mJ |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
30 V |
30 V |
Maximum drain-source on-resistance |
0.03 Ω |
0.03 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
MS-012AA |
MS-012AA |
JESD-30 code |
R-PDSO-G8 |
R-PDSO-G8 |
JESD-609 code |
e3 |
e0 |
Humidity sensitivity level |
1 |
1 |
Number of components |
1 |
1 |
Number of terminals |
8 |
8 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
245 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum pulsed drain current (IDM) |
37 A |
37 A |
surface mount |
YES |
YES |
Terminal surface |
Matte Tin (Sn) |
Tin/Lead (Sn/Pb) |
Terminal form |
GULL WING |
GULL WING |
Terminal location |
DUAL |
DUAL |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
30 |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |