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IRF9410

Showing 9 Results for IRF9410, including IRF9410,IRF9410, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRF9410 International Rectifier ( Infineon ) Power MOSFET(Vdss=30V, Rds(on)=0.030ohm) Download
IRF9410 Infineon MOSFET N-CH 30V 7A 8-SOIC Download
IRF9410PBF International Rectifier ( Infineon ) 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Download
IRF9410PBF Infineon MOSFET 30V 1 N-CH HEXFET 30mOhms 18nC Download
IRF9410PBF_15 International Rectifier ( Infineon ) GENERATION V TECHNOLOGY Download
IRF9410TR International Rectifier ( Infineon ) Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Download
IRF9410TR Infineon MOSFET N-CH 30V 7A 8-SOIC Download
IRF9410TRPBF International Rectifier ( Infineon ) mosfet mosft 30v 7A 30mohm 18nc Download
IRF9410TRPBF Infineon Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 30mΩ @ 7A, 10V Maximum power dissipation (Ta= 25°C): 2.5W Type: N channel N channel, 30V, 7A (Ta) Download
IRF9410 Related Product Datasheets:
Part Number Datasheet
IRF9410 、 IRF9410TR Download Datasheet
IRF9410 、 IRF9410TRPBF Download Datasheet
IRF9410TR Download Datasheet
IRF9410TRPBF Download Datasheet
IRF9410PBF Download Datasheet
IRF9410PBF Download Datasheet
IRF9410PBF_15 Download Datasheet
IRF9410 Related Products:
Part Number IRF9410TRPBF IRF9410
Description Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 30mΩ @ 7A, 10V Maximum power dissipation (Ta= 25°C): 2.5W Type: N channel N channel, 30V, 7A (Ta) Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
Is it Rohs certified? conform to incompatible
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, ULTRA LOW RESISTANCE HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 70 mJ 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain-source on-resistance 0.03 Ω 0.03 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA MS-012AA
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 245
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 37 A 37 A
surface mount YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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