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IRF2804SPBF

Among 2 related components, IRF2804SPBF have related pdf.
Part Number Manufacturer Description Datasheet
IRF2804SPBF International Rectifier ( Infineon ) 75 A, 40 V, 0.002 ohm, N-CHANNEL, Si, POWER, MOSFET Download
IRF2804SPBF Infineon MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC Download
IRF2804SPBF parameters:

Description

MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLEAD FREE, PLASTIC, D2PAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)540 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.002 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)1080 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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