Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | LEAD FREE, PLASTIC, D2PAK-3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | AVALANCHE RATED, ULTRA LOW RESISTANCE |
Avalanche Energy Efficiency Rating (Eas) | 540 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 40 V |
Maximum drain current (Abs) (ID) | 75 A |
Maximum drain current (ID) | 75 A |
Maximum drain-source on-resistance | 0.002 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 300 W |
Maximum pulsed drain current (IDM) | 1080 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |