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IRF1010EZ

Showing 23 Results for IRF1010EZ, including IRF1010EZ,IRF1010EZ, etc. You can look for possible substitutions between devices by comparing the similarities and differences between them.
Part Number Manufacturer Description Datasheet
IRF1010EZ International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF1010EZ Infineon MOSFET N-CH 60V 75A TO-220AB Download
IRF1010EZ ISC N-Channel MOSFET Transistor Download
IRF1010EZL International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF1010EZL Infineon MOSFET N-CH 60V 75A TO-262 Download
IRF1010EZLPBF International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF1010EZLPBF Infineon MOSFET MOSFT 60V 84A 8.5mOhm 58nC Download
IRF1010EZPBF International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF1010EZPBF Infineon Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 75A (Tc) Gate-source threshold voltage: 4V @ 100uA Drain-source on-resistance: 8.5mΩ @ 51A, 10V Maximum power consumption Dispersion (Ta=25°C): 140W(Tc) Type: N-channel Download
IRF1010EZPBF_15 International Rectifier ( Infineon ) Advanced Process Technology Download
IRF1010EZS International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRF1010EZS Infineon MOSFET N-CH 60V 75A D2PAK Download
IRF1010EZS ISC Isc N-Channel MOSFET Transistor Download
IRF1010EZSPBF International Rectifier ( Infineon ) 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Download
IRF1010EZSPBF Infineon MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC Download
IRF1010EZSTRL International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Download
IRF1010EZSTRLP International Rectifier ( Infineon ) Advanced Process Technology Download
IRF1010EZSTRLP Infineon Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 75A (Tc) Gate-source threshold voltage: 4V @ 100uA Drain-source on-resistance: 8.5mΩ @ 51A, 10V Maximum power consumption Dispersion (Ta=25°C): 140W(Tc) Type: N-channel MOSFETN-CH60V75AD2PAK Download
IRF1010EZSTRLPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Download
IRF1010EZSTRLPBF Infineon Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Download
IRF1010EZSTRR International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Download
IRF1010EZSTRRPBF Infineon Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Download
IRF1010EZSTRRPBF International Rectifier ( Infineon ) Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Download
IRF1010EZ Related Product Datasheets:
Part Number Datasheet
IRF1010EZSTRL 、 IRF1010EZSTRLPBF 、 IRF1010EZSTRLPBF 、 IRF1010EZSTRR 、 IRF1010EZSTRRPBF 、 IRF1010EZSTRRPBF Download Datasheet
IRF1010EZL 、 IRF1010EZLPBF 、 IRF1010EZPBF 、 IRF1010EZSPBF Download Datasheet
IRF1010EZ 、 IRF1010EZPBF 、 IRF1010EZS 、 IRF1010EZSTRLP Download Datasheet
IRF1010EZ 、 IRF1010EZL 、 IRF1010EZS Download Datasheet
IRF1010EZSTRLP Download Datasheet
IRF1010EZLPBF Download Datasheet
IRF1010EZPBF_15 Download Datasheet
IRF1010EZSPBF Download Datasheet
IRF1010EZ Related Products:
Part Number IRF1010EZSTRRPBF IRF1010EZSTRL IRF1010EZSTRLPBF IRF1010EZSTRLPBF IRF1010EZSTRR IRF1010EZSTRRPBF
Description Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Is it Rohs certified? conform to incompatible conform to conform to incompatible conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) Infineon International Rectifier ( Infineon ) International Rectifier ( Infineon ) Infineon
package instruction SMALL OUTLINE, R-PSSO-G2 PLASTIC, D2PAK-3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 PLASTIC, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant unknown compliant compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, ULTRA LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 99 mJ 99 mJ 99 mJ 99 mJ 99 mJ 99 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 75 A 75 A 75 A 75 A 75 A 75 A
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω 0.0085 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e3 e3 e0 e3
Humidity sensitivity level 1 1 1 1 1 1
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 150 °C 175 °C 175 °C 150 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 225 260 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 140 W 140 W 140 W 140 W 140 W 140 W
Maximum pulsed drain current (IDM) 340 A 340 A 340 A 340 A 340 A 340 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb) Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN OVER NICKEL Tin/Lead (Sn/Pb) Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30 30 NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1
Is it lead-free? Lead free Contains lead - Lead free Contains lead -
Parts packaging code D2PAK D2PAK - D2PAK D2PAK -
Contacts 3 3 - 3 3 -

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