Part Number |
IRF1010EZSTRRPBF |
IRF1010EZSTRL |
IRF1010EZSTRLPBF |
IRF1010EZSTRLPBF |
IRF1010EZSTRR |
IRF1010EZSTRRPBF |
Description |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 |
Is it Rohs certified? |
conform to |
incompatible |
conform to |
conform to |
incompatible |
conform to |
Maker |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
Infineon |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
Infineon |
package instruction |
SMALL OUTLINE, R-PSSO-G2 |
PLASTIC, D2PAK-3 |
SMALL OUTLINE, R-PSSO-G2 |
SMALL OUTLINE, R-PSSO-G2 |
PLASTIC, D2PAK-3 |
SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code |
compliant |
unknown |
compliant |
compliant |
unknown |
compliant |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
EAR99 |
Other features |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
AVALANCHE RATED, ULTRA LOW RESISTANCE |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
AVALANCHE RATED, ULTRA LOW RESISTANCE |
Avalanche Energy Efficiency Rating (Eas) |
99 mJ |
99 mJ |
99 mJ |
99 mJ |
99 mJ |
99 mJ |
Shell connection |
DRAIN |
DRAIN |
DRAIN |
DRAIN |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
60 V |
60 V |
60 V |
60 V |
Maximum drain current (Abs) (ID) |
75 A |
75 A |
75 A |
75 A |
75 A |
75 A |
Maximum drain current (ID) |
75 A |
75 A |
75 A |
75 A |
75 A |
75 A |
Maximum drain-source on-resistance |
0.0085 Ω |
0.0085 Ω |
0.0085 Ω |
0.0085 Ω |
0.0085 Ω |
0.0085 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-263AB |
TO-263AB |
TO-263AB |
TO-263AB |
TO-263AB |
TO-263AB |
JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
R-PSSO-G2 |
JESD-609 code |
e3 |
e0 |
e3 |
e3 |
e0 |
e3 |
Humidity sensitivity level |
1 |
1 |
1 |
1 |
1 |
1 |
Number of components |
1 |
1 |
1 |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
2 |
2 |
2 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
150 °C |
175 °C |
175 °C |
150 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
260 |
225 |
260 |
260 |
260 |
260 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
140 W |
140 W |
140 W |
140 W |
140 W |
140 W |
Maximum pulsed drain current (IDM) |
340 A |
340 A |
340 A |
340 A |
340 A |
340 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
YES |
YES |
YES |
YES |
Terminal surface |
MATTE TIN OVER NICKEL |
Tin/Lead (Sn/Pb) |
Matte Tin (Sn) - with Nickel (Ni) barrier |
MATTE TIN OVER NICKEL |
Tin/Lead (Sn/Pb) |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
GULL WING |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
30 |
30 |
30 |
30 |
NOT SPECIFIED |
30 |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |
1 |
1 |
1 |
1 |
Is it lead-free? |
Lead free |
Contains lead |
- |
Lead free |
Contains lead |
- |
Parts packaging code |
D2PAK |
D2PAK |
- |
D2PAK |
D2PAK |
- |
Contacts |
3 |
3 |
- |
3 |
3 |
- |