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IPI80N03S4L03AKSA1

Among 1 related components, IPI80N03S4L03AKSA1 have related pdf.
Part Number Manufacturer Description Datasheet
IPI80N03S4L03AKSA1 Infineon MOSFET N-CHANNEL_30/40V Download
IPI80N03S4L03AKSA1 parameters:

Description

MOSFET N-CHANNEL_30/40V

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)260 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.0027 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)320 A
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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