Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Other features | ULTRA LOW RESISTANCE |
Avalanche Energy Efficiency Rating (Eas) | 260 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 80 A |
Maximum drain-source on-resistance | 0.0027 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-262AA |
JESD-30 code | R-PSIP-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 320 A |
surface mount | NO |
Terminal surface | Tin (Sn) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Base Number Matches | 1 |