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IPB156N22NFDATMA1

Among 1 related components, IPB156N22NFDATMA1 have related pdf.
Part Number Manufacturer Description Datasheet
IPB156N22NFDATMA1 Infineon MOSFET N-CH 220V TO263-3 Download
IPB156N22NFDATMA1 parameters:

Description

MOSFET N-CH 220V TO263-3

Parametric
Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)220V
Current - Continuous Drain (Id) at 25°C72A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs15.6 milliohms @ 50A, 10V
Vgs (th) (maximum value) when different Id4V @ 270µA
Gate charge (Qg) at different Vgs (maximum value)87nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)6930pF @ 110V
FET function-
Power dissipation (maximum)300W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingPG-TO263-3
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB

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