Parameter Name | Attribute value |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 220V |
Current - Continuous Drain (Id) at 25°C | 72A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 10V |
Rds On (maximum value) when different Id, Vgs | 15.6 milliohms @ 50A, 10V |
Vgs (th) (maximum value) when different Id | 4V @ 270µA |
Gate charge (Qg) at different Vgs (maximum value) | 87nC @ 10V |
Vgs (maximum value) | ±20V |
Input capacitance (Ciss) at different Vds (maximum value) | 6930pF @ 110V |
FET function | - |
Power dissipation (maximum) | 300W(Tc) |
Operating temperature | -55°C ~ 175°C(TJ) |
Installation type | surface mount |
Supplier device packaging | PG-TO263-3 |
Package/casing | TO-263-3, D²Pak (2-lead + tab), TO-263AB |