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FDMS3500

Among 2 related components, FDMS3500 have related pdf.
Part Number Manufacturer Description Datasheet
FDMS3500 Fairchild N-Channel Power Trench㈢ MOSFET 75V, 49A, 14.5mヘ Download
FDMS3500 ON Semiconductor MOSFET 75V N-Channel PowerTrench Download
FDMS3500 parameters:

Description

MOSFET 75V N-Channel PowerTrench

Parametric
Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
package instructionSMALL OUTLINE, R-PDSO-N5
Manufacturer packaging code483AE
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)384 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (Abs) (ID)49 A
Maximum drain current (ID)9.2 A
Maximum drain-source on-resistance0.0145 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)96 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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