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DXT2012P5-13

Among 2 related components, DXT2012P5-13 have related pdf.
Part Number Manufacturer Description Datasheet
DXT2012P5-13 Diodes Incorporated Bipolar Transistors - BJT BIPOLAR TRANS,PNP 60V,-5.5A Download
DXT2012P5-13 Diodes Rated power: 3.2W Collector current Ic: 5.5A Collector-emitter breakdown voltage Vce: 60V Transistor type: PNP - Download
DXT2012P5-13 parameters:

Description

额定功率:3.2W 集电极电流Ic:5.5A 集射极击穿电压Vce:60V 晶体管类型:PNP -

Parametric
Parameter NameAttribute value
rated power3.2W
Collector current Ic5.5A
Collector-emitter breakdown voltage Vce60V
Transistor typePNP

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