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BSC0911ND

Among 2 related components, BSC0911ND have related pdf.
Part Number Manufacturer Description Datasheet
BSC0911ND Infineon MOSFET N-Ch 25V 40A TISON-8 Download
BSC0911NDATMA1 Infineon MOSFET N-Ch 25V 40A TISON-8 Download
BSC0911ND parameters:

Description

MOSFET N-Ch 25V 40A TISON-8

Parametric
Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-N6
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN SOURCE
ConfigurationSERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance0.0048 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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