Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
package instruction | SMALL OUTLINE, R-PDSO-N6 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | DRAIN SOURCE |
Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 25 V |
Maximum drain current (ID) | 2.2 A |
Maximum drain-source on-resistance | 0.0048 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-N6 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 2 |
Number of terminals | 6 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | NO LEAD |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Base Number Matches | 1 |