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7MBR35VP

Among 2 related components, 7MBR35VP have related pdf.
Part Number Manufacturer Description Datasheet
7MBR35VP120-50 FUJI IGBT MODULE Download
7MBR35VP120-50 Fuji Electric Co., Ltd. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-26 Download
7MBR35VP parameters:

Description

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-26

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-XUFM-X21
Contacts26
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)35 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X21
Number of components7
Number of terminals21
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)210 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)530 ns
Nominal on time (ton)390 ns
VCEsat-Max2.6 V
Base Number Matches1

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