Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
7MBR35VP120-50 | FUJI | IGBT MODULE | Download |
7MBR35VP120-50 | Fuji Electric Co., Ltd. | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-26 | Download |
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, COMPACT PACKAGE-26
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | FLANGE MOUNT, R-XUFM-X21 |
Contacts | 26 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 35 A |
Collector-emitter maximum voltage | 1200 V |
Configuration | COMPLEX |
Gate-emitter maximum voltage | 20 V |
JESD-30 code | R-XUFM-X21 |
Number of components | 7 |
Number of terminals | 21 |
Maximum operating temperature | 125 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 210 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 530 ns |
Nominal on time (ton) | 390 ns |
VCEsat-Max | 2.6 V |
Base Number Matches | 1 |