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6MBI150VX-120-50

Among 2 related components, 6MBI150VX-120-50 have related pdf.
Part Number Manufacturer Description Datasheet
6MBI150VX-120-50 FUJI IGBT MODULE Download
6MBI150VX-120-50 Fuji Electric Co., Ltd. Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 Download
6MBI150VX-120-50 parameters:

Description

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFuji Electric Co Ltd
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X13
Contacts35
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X13
Number of components6
Number of terminals13
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)530 ns
Nominal on time (ton)390 ns

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