Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
6MBI150VX-120-50 | FUJI | IGBT MODULE | Download |
6MBI150VX-120-50 | Fuji Electric Co., Ltd. | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 | Download |
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Fuji Electric Co Ltd |
Parts packaging code | MODULE |
package instruction | FLANGE MOUNT, R-XUFM-X13 |
Contacts | 35 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 150 A |
Collector-emitter maximum voltage | 1200 V |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 code | R-XUFM-X13 |
Number of components | 6 |
Number of terminals | 13 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 530 ns |
Nominal on time (ton) | 390 ns |