Part Number | Manufacturer | Description | Datasheet |
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2SB834 | Transys Electronics Limited | Plastic-Encapsulated Transistors | Download |
2SB834 | MOSPEC | POWER TRANSISTORS(3.0A,60V,30W) | Download |
2SB834 | SAVANTIC | Silicon PNP Power Transistors | Download |
2SB834 | ISC | Silicon PNP Power Transistors | Download |
2SB834 | Weitron Technology | PNP Silicon Epitaxial Power Transistor | Download |
2SB834 | Jinmei | Silicon PNP Power Transistors | Download |
2SB834 | UNISONIC TECHNOLOGIES CO.,LTD | HIGH VOLTAGE TRANSISTOR | Download |
2SB834 | WINNERJOIN | TRANSISTOR (PNP) | Download |
2SB834 | SECOS | PNP Plastic-Encapsulated Transistor | Download |
2SB834 | Tiger Electronic Co.,Ltd. | POWER TRANSISTOR | Download |
2SB834 | Wing Shing Computer Components Co., (H.K.)Ltd. | pnp epitaxial silicon transistor(low frequency power amplifier) | Download |
2SB834 | Galaxy Microelectronics | Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 60V; IC (A): 3A; HFE Min: 60; HFE Max: 200; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 1V; IC (mA)1: 3000mA; IB (mA): 300mA; FT Min (MHz): 9 MHz; PTM Max (W): 1.5W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB | Download |
2SB834 | Toshiba Semiconductor | TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power | Download |
2SB834 | Foshan Blue Rocket Electronics Co.,Ltd. | Silicon PNP transistor in a TO-220 Plastic Package. | Download |
2SB834 | New Jersey Semiconductor | Silicon PNP Power Transistor | Download |
2SB834 | JCET | PNP transistor | Download |
2SB834 | Shanghai Jiaxing Electronics Co.,Ltd. | 60V 3A 1.5W TO-220 Bipolar Transistor | Download |
2SB834 | LGE | Bipolar transistor, 60V, 3A, 9MHZ, -55-150℃ | Download |
2SB834 | Inchange Semiconductor | Bipolar Transistors;PNP;-3A;-60V;TO-220 | Download |
2SB834_09 | UNISONIC TECHNOLOGIES CO.,LTD | HIGH VOLTAGE TRANSISTOR | Download |
2SB834_15 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | Download |
2SB834_15 | SECOS | PNP Plastic-Encapsulated Transistor | Download |
2SB834_15 | UNISONIC TECHNOLOGIES CO.,LTD | HIGH VOLTAGE TRANSISTOR | Download |
2SB834_15 | Jinmei | Silicon PNP Power Transistors | Download |
2SB834_2014 | Quanzhou Jinmei Electronic Co.,Ltd. | Silicon PNP Power Transistors | Download |
2SB834G-GR-AB3-R | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor | Download |
2SB834G-GR-T60-K | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3 | Download |
2SB834G-GR-TA3-T | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3 | Download |
2SB834G-GR-TF3-T | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN | Download |
2SB834G-GR-TN3-R | UNISONIC TECHNOLOGIES CO.,LTD | Power Bipolar Transistor | Download |
Part Number | Datasheet |
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2SB834-GR-T60-K 、 2SB834-GR-TA3-T 、 2SB834-GR-TF3-T 、 2SB834-O-T60-K 、 2SB834-O-TA3-T 、 2SB834-O-TF3-T 、 2SB834-Y-T60-K 、 2SB834-Y-TA3-T 、 2SB834-Y-TF3-T | Download Datasheet |
2SB834_15 、 2SB834G-X-AB3-R 、 2SB834G-X-TN3-R 、 2SB834L-X-AB3-R 、 2SB834L-X-TN3-R | Download Datasheet |
2SB834 、 2SB834O 、 2SB834O 、 2SB834Y | Download Datasheet |
2SB834 、 2SB834-O 、 2SB834-Y | Download Datasheet |
2SB834Y(TO-126) 、 2SB834GR(TO-126) | Download Datasheet |
2SB834-O-C 、 2SB834-Y-C | Download Datasheet |
2SB834O 、 2SB834Y | Download Datasheet |
2SB834O 、 2SB834Y | Download Datasheet |
2SB834O 、 2SB834Y | Download Datasheet |
2SB834GR(TO-220) 、 2SB834O(TO-220) | Download Datasheet |
Part Number | 2SB834-GR-T60-K | 2SB834-GR-TA3-T | 2SB834-GR-TF3-T | 2SB834-O-T60-K | 2SB834-O-TA3-T | 2SB834-O-TF3-T | 2SB834-Y-T60-K | 2SB834-Y-TA3-T | 2SB834-Y-TF3-T |
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Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN |
Parts packaging code | SIP | TO-220AB | TO-220AB | SIP | TO-220AB | TO-220AB | SIP | TO-220AB | TO-220AB |
package instruction | TO-126, 3 PIN | TO-220, 3 PIN | TO-220F, 3 PIN | TO-126, 3 PIN | TO-220, 3 PIN | TO-220F, 3 PIN | TO-126, 3 PIN | TO-220, 3 PIN | TO-220F, 3 PIN |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 150 | 150 | 150 | 60 | 60 | 60 | 100 | 100 | 100 |
JEDEC-95 code | TO-126 | TO-220AB | TO-220AB | TO-126 | TO-220AB | TO-220AB | TO-126 | TO-220AB | TO-220AB |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 9 MHz | 9 MHz | 9 MHz | 9 MHz | 9 MHz | 9 MHz | 9 MHz | 9 MHz | 9 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |