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US1GF

Description
Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.4V @ 1A
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size624KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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US1GF Overview

Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.4V @ 1A

US1GF Parametric

Parameter NameAttribute value
Reverse recovery time (trr)50ns
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.4V @ 1A

US1GF Preview

Download Datasheet
US1AF THRU US1MF
SURFACE MOUNT ULTRA FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SMAF
Cathode Band
Top View
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed
260 C/10 seconds at terminals
Glass passivated chip junction
0.106(2.70)
0.094(2.40)
0.063(1.60)
0.051(1.30)
0.146(3.7)
0.130(3.3)
0.051(1.30)
0.043(1.10)
0.0091(0.23)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case
: JEDEC SMAF molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0018
ounce, 0.064 grams
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
US1AF US1BF US1DF US1GF US1JF US1KF US1MF
UNITS
MDD MDD
MDD
MDD
MDD
MDD MDD
US1AF US1BF US1DF US1GF US1JF US1KF US1MF
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
VOLTS
VOLTS
VOLTS
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
50
1.0
30.0
1.4
5.0
50.0
75
15.0
50.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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