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US1G

Description
Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A 400V, 1A, VF=1.3V@1A
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size393KB,3 Pages
ManufacturerShenzhen Heketai Electronics Co., Ltd.
Websitehttp://www.heketai.com
Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.
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US1G Overview

Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.3V @ 1A 400V, 1A, VF=1.3V@1A

US1G Parametric

Parameter NameAttribute value
Reverse recovery time (trr)50ns
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.3V @ 1A

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US1A-US1M
SURFACE MOUNT ULTRA FAST RECTIFIER
FEATURES
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability Classification Rating 94V-0
DO-214AC (SMA)
MECHANICAL DATA
Case: DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 70mg (approx.)
Cathode
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive
load. For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at T
A
=75 °C
Peak Forward Surge Current 8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC)
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
T
A
= 25 °C
T
A
=100 °C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J, TS
50
15.0
50.0
-65 to + 150
1.0
US1A
50
35
50
US1B
100
70
100
US1D
200
140
200
US1G
400
280
400
1.0
30.0
1.3
5.0
50.0
75
1.7
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
Unit
V
V
V
A
A
V
µA
nS
pF
°C/W
°C
Maximum reverse recovery time
(NOTE1)
Typical Junction Capacitance
(NOTE2)
Maximum Thermal Resistance
(NOTE3)
Operating and Storage Temperature Range
Note: 1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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