UF102G_R2_00001 datasheet, PDF

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UF102G_R2_00001: DescriptionRectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,; CategoryDiscrete semiconductor diode; File Size125KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

UF102G_R2_00001 Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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UF100G SERIES

GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIER

VOLTAGE

50 to 1000 Volts

CURRENT

1.0 Amperes

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound

• Exceeds environmental standards of MIL-S-19500/228.

• Ultra Fast recovery for high efficiency.

• Lead free in comply with EU RoHS 2002/95/EC directives.

0.205(5.2)

0.160(4.1)

0.034(0.86)

0.028(0.71)

MECHANICAL DATA

Terminals: Axial leads, solderable per MIL-STD-750,Method 2026

Polarity: Band denotes cathode

Mounting Position: Any

Weight: 0.0118 ounce, 0.336 gram

1.0(25.4)MIN.

Case: Molded plastic, DO-41

0.107(2.7)

0.080(2.0)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

PA RA ME TE R

Ma xi mum Re curre nt P e a k Re ve rs e Vo ltag e

Ma xi mum RMS Volta ge

Ma xi mum D C B lo ck i ng Vo lta g e

Ma xi mum A ve rag e F o rwa rd C urre nt .3 75 " (9 .5 mm)

le a d le ng th a t T

=5 5

P e ak F o rwa rd S urg e C urre nt : 8.3m s s i ng le half si ne -

wa ve sup e ri mp o s ed o n rated lo a d(JE D E C metho d )

Ma xi mum F o rwa rd Vo lta g e a t 1 .0 A

Ma xi mum D C Reve rs e C urre nt a t Ra te d

D C B loc k i ng Vo lta g e

Typ i c a l Juncti o n C a pa c i ta nce (No te 1 )

Typ i c a l The rma l Re si sta nce (No te 2 )

Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 3 )

Op e ra ti ng Junc ti on a nd S to ra g e Temp e ra ture Ra ng e

=2 5

=1 25

S YM B OL

RRM

RMS

UF 10 0 G

UF 10 1 G

100

UF 1 02 G

200

140

200

UF 10 4 G

4 00

28 0

4 00

1 .0

UF 1 0 6 G

60 0

420

60 0

UF 10 8 G

800

560

800

UF 1 0 1 0G

10 0 0

700

10 0 0

UNITS

F (AV

)

FSM

1 .0

1 .3

1 .0

150

-5 5 to +15 0

1.7

μA

θJ

S TG

C / W

1 00

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.

3. Reverse Recovery Time I

=.5A ,I

=1A , I

=.25A

December 21,2010-REV.01

PAGE . 1

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