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TSF60R190S2

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 190mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 34W(Tc) Type: N channel N channel 600V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size3MB,9 Pages
ManufacturerSHENZHEN TRUESEMI SEMICONDUCTOR CO., LTD.
Websitehttp://www.truesemi.com
Xinan Semiconductor was established in 2008 and is a wholly-owned subsidiary of Allianz Group. It is committed to the sales of MOSFET products in Greater China. In 2009, Allianz Group invested in the field of semiconductor design in South Korea and acquired the 8-inch VD-MOS chip factory of POWER SOLUSTION in South Korea in the same year. POWER SOLUSTION is a professional power semiconductor FAB OWN company. The company was established in 2005. It mainly engages in the production and research and development of POWER MOSFET and IGBT. At present, the monthly production capacity of 8 inches is 12,000 pieces, which is the only PLANNER 8-inch wafer production line in East Asia. They have rich industry experience in product research and development and production processes. The company was recognized as an IT VENTURE enterprise by the Korean government in 2009. It has affiliated research institutes in Far East University and Bucheon, South Korea. At present, VD-MOSFET and IGBT products have obtained 12 technical patents from the Korean government. The products produced by POWER SOLUSTION are widely used in various fields such as welding machines, inverters, ballasts, adapters, chargers, PC power supplies, and TV power supplies. South Korean companies such as Samsung Electronics, LG Electronics, and Konka are all end customers of POWER SOLUSTION.
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TSF60R190S2 Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 190mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 34W(Tc) Type: N channel N channel 600V

TSF60R190S2 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C20A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance190mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)34W(Tc)
typeN channel

TSF60R190S2 Preview

Download Datasheet
May, 2018
SJ-FET
TSF60R190S2/TSP60R190S2
600V N-Channel Super-Junction MOSFET Gen-Ⅱ
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Multi-Epi process SJ-FET
650V @TJ = 150 ℃
Typ. RDS(on) = 0.16Ω
Ultra Low Gate Charge (typ. Qg
= 36.5nC)
• 100% avalanche tested
TSF60R190S2/TSP60R190S2
600V
N-Channel Super-Junction MOSFET Gen-Ⅱ
Features
TSF60R190S2
TSP60R190S2
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AS
dv/dt
dVds/dt
P
D
T
J
, T
STG
T
L
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Peak Diode Recovery dv/dt
(Note 3)
Drain Source voltage slope (Vds=480V)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/16” from Case for 10 Seconds
TSP60R190S2
600
20*
12.6*
65
±30
485
3.5
15
50
150
-55 to +150
260
TSF60R190S2
Unit
V
A
A
V
mJ
A
V/ns
V/ns
34
W
* Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP60R190S2
0.83
0.5
62
TSF60R190S2
3.7
-
80
Unit
℃/W
℃/W
℃/W
©2018 Truesemi Semiconductor Corporation
TSF60R190S2/TSP60R190S2
Rev. 1.0
www.Truesemi.com
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