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TSF5N60M

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4.5A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 2.5Ω @ 2.25A, 10V max Power dissipation (Ta=25°C): 34W(Tc) Type: N-channel N-channel, 600V, 4.5A, 2.5Ω
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,9 Pages
ManufacturerSHENZHEN TRUESEMI SEMICONDUCTOR CO., LTD.
Websitehttp://www.truesemi.com
Xinan Semiconductor was established in 2008 and is a wholly-owned subsidiary of Allianz Group. It is committed to the sales of MOSFET products in Greater China. In 2009, Allianz Group invested in the field of semiconductor design in South Korea and acquired the 8-inch VD-MOS chip factory of POWER SOLUSTION in South Korea in the same year. POWER SOLUSTION is a professional power semiconductor FAB OWN company. The company was established in 2005. It mainly engages in the production and research and development of POWER MOSFET and IGBT. At present, the monthly production capacity of 8 inches is 12,000 pieces, which is the only PLANNER 8-inch wafer production line in East Asia. They have rich industry experience in product research and development and production processes. The company was recognized as an IT VENTURE enterprise by the Korean government in 2009. It has affiliated research institutes in Far East University and Bucheon, South Korea. At present, VD-MOSFET and IGBT products have obtained 12 technical patents from the Korean government. The products produced by POWER SOLUSTION are widely used in various fields such as welding machines, inverters, ballasts, adapters, chargers, PC power supplies, and TV power supplies. South Korean companies such as Samsung Electronics, LG Electronics, and Konka are all end customers of POWER SOLUSTION.
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TSF5N60M Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 4.5A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 2.5Ω @ 2.25A, 10V max Power dissipation (Ta=25°C): 34W(Tc) Type: N-channel N-channel, 600V, 4.5A, 2.5Ω

TSF5N60M Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C4.5A(Tc)
Gate-source threshold voltage5V @ 250uA
Drain-source on-resistance2.5Ω @ 2.25A,10V
Maximum power dissipation (Ta=25°C)34W(Tc)
typeN channel
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