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TSA143TNND03

Description
DIGITAL TRANSISTOR (PNP)Digital transistor (PNP)
CategoryDiscrete semiconductor   
File Size362KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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TSA143TNND03 Overview

DIGITAL TRANSISTOR (PNP)Digital transistor (PNP)

Features

Product Name: DIGITAL TRANSISTOR (PNP)


Product model:TSA143TNND03


Product Description:


Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


resistors(see equivalent circuit)


The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the


input.They also have the advantage of almost completely eliminating parasitic effects


Only the on/off conditions need to be set for operation, making device design easy




parameter:


Polarity: PNP


PD (power consumption): 150mW


Io (output current): 100mA


Vcc (power supply voltage): 50V


GI (DC Current Gain): 100


Vo (on) (output current): 0.3V


R1: 4.7K+Ω


R2:∞


fT (transition frequency): 250+MHz


Package: WBFBP-03B

TSA143TNND03 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
TSA143TNND03
DESCRIPTION
PNP Digital Transistor
FEATURES
1) Built-in bias resistors enable the configuration of an
inverter circuit
without connecting external input
resistors (see equivalent circuit)
2) The bias resistors consist of thin-film resistors with
to allow
positive
biasing of the
input. They also have the advantage of
almost
completely eliminating parasitic effects
3) Only the on/off conditions need to be set for operation,
making device design easy
APPLICATION
PNP Digital Transistor
For portable equipment:(i.e.
Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note
book PC, etc.)
MARKING: 93
O
equivalent circuit
O
TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
I
G
O
BACK
G
I
1. IN
2. GND
3. OUT
93
I
G
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base
Voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
j
T
stg
Value
-50
-50
-5
-100
150
150
-55~150
Units
V
V
V
mA
mW
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
100
3.29
4.7
250
Min
-50
-50
-5
-0.5
-0.5
-0.3
600
6.11
KΩ
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
Typ
Max
Unit
V
V
V
μA
μA
V
Conditions
I
C
=-50μA
I
C
=-1mA
I
E
=-50μA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA,I
B
=-0.25mA
V
CE
=-5V,I
C
=-1mA
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