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TDM3736

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 112A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.2mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 104W(Tc) Type: N-channel N-channel 80V 4.2mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size469KB,7 Pages
ManufacturerTechcode Semiconductor, Inc.
Websitehttp://www.techcodesemi.com/cn/index.asp
In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.
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TDM3736 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 112A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.2mΩ @ 20A, 10V Maximum power consumption Dispersion (Ta=25°C): 104W(Tc) Type: N-channel N-channel 80V 4.2mΩ@10V

TDM3736 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C112A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance4.2mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)104W(Tc)
typeN channel

TDM3736 Preview

Download Datasheet
 
 
 
 
T
echcode
®
N-Channel Enhancement Mode MOSFET
 
 
DATASHEET
TDM3736
DESCRIPTION 
The  TDM3736  uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in 
 
PWM 
applications. 
GENERAL FEATURES 
100V/112A 
RDS(ON) < 4.2mΩ @ VGS=10V 
High Power and current handling capability 
Lead free product is available 
Surface Mount Package 
Application 
DC‐DC Conversion 
Hard Switching and High Speed Circuit 
Power Tools 
UPS 
SSR 
 
 
 
PQFN5X6‐8 
 
 
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted) 
Parameter 
Drain‐Source Voltage 
Gate‐Source Voltage 
Drain Current @ Continuous
(Note 1)
 
Drain Current @ Current‐Pulsed 
(Note 1)
 
Maximum Power Dissipation 
 
Avalanche Energy, Single Pulse 
Operating Junction and Storage Temperature Range 
THERMAL CHARACTERISTICS 
Thermal Resistance,Junction‐to‐Ambient 
(Note 2)
 
Thermal Resistance,Junction‐to‐Case 
 
Symbol 
V
DS
 
V
GS
 
I
D
(T
C
=25℃) 
I
D
(T
C
=100℃) 
I
DM
(T
C
=25℃) 
P
D
(T
C
=25℃) 
E
AS
(L=0.1mH,T
C
=25℃)
T
J,
T
STG
 
R
θJA
 
R
θJC
 
Limit 
100 
+20 
112 
71 
400 
104 
180 
‐55 To 150 
50 
1.2 
Unit 
mJ 
℃ 
℃/W 
℃/W 
 
 
October,  16,  2018 
                                                         
Techcode  Semiconductor  Limited 
                                                 
www.techcodesemi.com 
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