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TDM3466

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 200A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 2.1mΩ @ 25A, 10V Maximum power Dissipation (Ta=25°C): 240W(Tc) Type: N-channel N-channel 40V 2.5mΩ@4.5V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size645KB,7 Pages
ManufacturerTechcode Semiconductor, Inc.
Websitehttp://www.techcodesemi.com/cn/index.asp
In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.
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TDM3466 Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 200A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 2.1mΩ @ 25A, 10V Maximum power Dissipation (Ta=25°C): 240W(Tc) Type: N-channel N-channel 40V 2.5mΩ@4.5V

TDM3466 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C200A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance2.1mΩ @ 25A,10V
Maximum power dissipation (Ta=25°C)240W(Tc)
typeN channel

TDM3466 Preview

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T
echcode
®
N-Channel Enhancement Mode MOSFET
DATASHEET
TDM3466
DESCRIPTION 
The  TDM3466  uses  advanced  trench  technology  to 
provide  excellent  RDS(ON)  and  low  gate  charge.  This 
device  is  suitable  for  use  as  a  load  switch  or  in 
 
PWM 
applications. 
GENERAL FEATURES 
 
RDS(ON) < 2.5mΩ @ VGS=4.5V 
 
RDS(ON) < 2.1mΩ @ VGS=10V 
High Power and current handing capability 
Lead free product is acquired 
TO220 Package 
 
Application 
PWM applications 
Load switch 
Power management 
 
 
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted) 
Parameter 
Drain‐Source Voltage 
Gate‐Source Voltage 
Drain Current @ Current‐Pulsed 
 
Drain Current @ Continuous 
Symbol 
V
DS
 
V
GS
 
I
DM
(T
C
=25℃) 
I
D
(T
C
=25℃) 
I
D
(T
C
=25℃) 
I
D
(T
C
=100℃) 
Maximum Power Dissipation 
 
Drain Current @ Continuous 
Maximum Power Dissipation 
Thermal Resistance‐Junction to Case 
Thermal Resistance‐Junction to Ambient
(Note 1)
 
Maximum Junction Temperature 
Storage Temperature Range 
Avalanche Current, Single pulse 
Avalanche Energy, Single pulse 
 
Limit 
40 
+20 
700 
300
(Silicon Limited)
 
200
(Package Limited)
 
78 
240 
120 
35 
28 
2.4 
1.7 
0.62 
62 
175 
‐55 To 150 
64 
200 
Unit 
℃/W 
℃/W 
℃ 
℃ 
mJ 
P
D
(T
C
=25℃) 
P
D
(T
C
=100℃) 
I
D
(T
A
=25℃) 
I
D
(T
A
=70℃) 
P
D
(T
A
=25℃) 
P
D
(T
A
=70℃) 
R
θJC
 
R
θJA
 
T
J
 
T
STG
 
I
AS
 (L=0.1mH) 
E
AS
(L=0.1mH) 
May  4,  2016 
                                                   
Techcode  Semiconductor  Limited 
                                               
www.techcodesemi.com 
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