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TDM31035

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 13A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 205mΩ @ 7.8A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W (Tc) Type: P channel P channel -100V 205mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size722KB,7 Pages
ManufacturerTechcode Semiconductor, Inc.
Websitehttp://www.techcodesemi.com/cn/index.asp
In the field of high-end analog circuit design and production, American Ted Semiconductor Co., Ltd. has 12 years of comprehensive design experience. We not only have the world's leading analog circuit design technology, but also have a more complete and advanced product quality management method. Due to the production method of "no production line design company", we use a more efficient wafer foundry cooperation model in business operations, so that we can quickly use advanced and more time-effective technology to design high-end analog circuit products with higher cost performance, and then quickly meet customers' needs for high-end products in the growing market demand.
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TDM31035 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 13A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 205mΩ @ 7.8A, 10V Maximum power consumption Dispersion (Ta=25°C): 50W (Tc) Type: P channel P channel -100V 205mΩ@10V

TDM31035 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C13A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance205mΩ @ 7.8A,10V
Maximum power dissipation (Ta=25°C)50W(Tc)
typeP channel

TDM31035 Preview

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T
echcode
®
P-Channel Enhancement Mode MOSFET
DATASHEET
TDM31035
DESCRIPTION 
The  TDM31035  uses  advanced  trench  technology  to 
provide excellent RDS(ON) and low gate charge. This 
device is suitable for use as a load switch or in 
 
PWM 
applications. 
GENERAL FEATURES 
‐100V/‐13A 
RDS(ON) <205mΩ @ VGS=‐10V 
 
RDS(ON) < 300mΩ @ VGS=‐4V 
Reliable and Rugged 
Lead free product is available 
Surface Mount Package 
 
Application 
PWM applications 
Load switch 
Power management 
 
 
 
 
ABSOLUTE MAXIMUM RATINGS(T
A
=25℃unless otherwise noted) 
Parameter 
Drain‐Source Voltage 
Gate‐Source Voltage 
Diode Continuous Forward Current 
300μs Pulse Drain Current Tested 
Continuous Drain Current 
Maximum Power Dissipation 
Thermal Resistance‐Junction to Ambient 
Thermal Resistance‐Junction to Case 
Maximum Junction Temperature 
Storage Temperature Range 
 
Symbol 
V
DS
 
V
GS
 
Is 
I
DP(
T
C
=25℃
)
 
I
DP(
T
C
=100℃
)
 
I
D
 
(
T
C
=25℃
)
 
I
D
 
(
T
C
=100℃
)
 
P
D(
T
C
=25℃
)
 
P
D(
T
C
=100℃
)
 
R
θJA
 
R
θJC
 
T
J
 
T
STG
 
Rating 
‐100 
+20 
‐1 
‐52 
‐32 
‐13
 note1
 
‐8 
50 
20 
50 
2.5 
150 
‐55 to 150 
Unit 
℃/W 
℃/W 
℃ 
℃ 
NOTES: 
1. Max continuous current is limited by bonding wire. 
November  17,  2015 
                                               
Techcode  Semiconductor  Limited 
                                               
www.techcodesemi.com 
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