TC2309 datasheet, PDF - EEWORLD Datasheet

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TC2309: DescriptionDrain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 1.4V @ 250uA Drain-source on-resistance: 62mΩ @ 4.5A, 4.5V Maximum power consumption Dispersed (Ta=25°C): - Type: P-channel P-channel -12V -4.5A; CategoryDiscrete semiconductor MOS (field effect tube); File Size93KB，1 Pages; ManufacturerFine Made Electronics Group Co., Ltd.; Websitehttp://www.superchip.cn/index.aspx; Shenzhen Fuman Electronics Group Co., Ltd. was founded in 2001. It is a national high-tech enterprise engaged in the design, development, packaging, testing and sales of high-performance analog and mixed-signal integrated circuits. It currently has more than 400 IC products in the consumer field, including power management, LED driver, MOSFET, etc.

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TC2309 Overview

Drain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 1.4V @ 250uA Drain-source on-resistance: 62mΩ @ 4.5A, 4.5V Maximum power consumption Dispersed (Ta=25°C): - Type: P-channel P-channel -12V -4.5A

TC2309 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	12V
Continuous drain current (Id) at 25°C	4.5A
Gate-source threshold voltage	1.4V @ 250uA
Drain-source on-resistance	62mΩ @ 4.5A,4.5V
Maximum power dissipation (Ta=25°C)	-
type	P channel

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深圳市富满电子集团股½有限公司

SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.

TC2309

(文件编号：S&CIC1053)

一、特点



12V

高密度设计的

沟道

MOS

管

超½导通电阻

DS(ON)=

50mΩ , TYP@V

= -4.5V

DS(ON)

=68mΩ, TYP@V

= -2.5V

12V

高密度

沟道

MOS

管

S 1

S 2

S 3

G 4

8 D

7 D

6 D

5 D

二、产品应用



笔记本电脑的电源管理、便携式设备和电池供电系统

SOP-8

三、电特性



极限参数（T

=25℃，除其它特殊说明）

符号

DSS

GSS

STG



参数

漏源极电压

栅源极电压

连续漏电流

脉冲漏电流

二极管连续正向电流

最高结温

贮存温度

额定值

-12

±8

-4.5

-15

-1

150

-55~150

单½

℃

静态电特性（T

=25℃，除其它特殊说明）

参数

漏源极击穿电压

漏极电压漏电流

门阈值电压

栅极漏电流

测试条件

=0V, I

=250uA

=-12V, V

=0V

=85℃

, I

=250uA

=±8V, V

=0V

=-1.8V, I

=-1A

110

-0.5

-0.7

最小值

典型值

-12

-1.4

±100

120

-1.3

最大值

单½

mΩ

Ω

符号

DSS

GS(th)

GSS

DS(ON)

漏源极导通电阻

=-2.5V, I

=-3.5A

=-4.5V, I

=-4.5A

二极管正向电压

栅极输入电阻

=-1A, V

=0V

VGS=0V;VDS=0V

Frequency=1MHZ

www.superchip.cn

第

页共

页

Version 1.1

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