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SX34T/R13

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size185KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

SX34T/R13 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SX34T/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.5 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SX34T/R13 Preview

Download Datasheet
SX32 ~ SX36
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
20 to 60 Volts
CURRENT
3.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
Lead free in comply with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals:Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Color band denotes cathode
end
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
L
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A ( N o t e 1 )
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J L
R
θ
J A
T
J
, T
S TG
SX32
20
14
20
.047(1.20)
SX33
30
21
30
SX34
40
28
40
3 .0
80
SX35
50
35
50
SX36
60
42
60
U N IT S
V
V
V
A
A
0 .5
0 .2
20
20
75
-5 5 to +1 2 5
0 .7 5
0 .1
20
O
V
mA
C / W
O
-5 5 to +1 5 0
C
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8.0mm
2
(.013mm thick) copper pad areas.
STAD-MAR.25.2009
1
PAGE . 1
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