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SX34LT/R7

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size80KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SX34LT/R7 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SX34LT/R7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeDO-214AC
package instructionROHS COMPLIANT, PLASTIC, SMA, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SX34LT/R7 Preview

Download Datasheet
SX34L
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
40 Volts
CURRENT
3.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.114(2.90)
0.098(2.50)
0.181(4.60)
0.157(4.00)
0
.
012(0
.
305)
0
.
006(0.152)
0.008(0.203)
0.002(0.051)
0.208(5.28)
0.188(4.80)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals:Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Standard packaging: 16mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
0.060(1.52)
0.030(0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PA RA M E TE R
M a xi mum Re c ur r e nt P e a k Re ve r s e Vo lta g e
M a xi mum RM S Vo lta g e
M a xi mum D C B lo c k i ng Vo lta g e
M a xi mum A ve r a g e F o r wa r d C ur r e nt D e r a te a t T
L
= 7 5
O
C
P e a k F o r wa r d S ur g e C ur r e nt : 8 .3 ms s i ng le ha lf s i ne - wa ve
s up e ri mp o s e d o n ra te d lo a d (J E D E C m e tho d )
M a xi mum F o rwa rd Vo lta g e @ 1 .0 A ( No te 1 )
@ 3 .0 A
M a xi mum D C Re ve rs e C urre nt a t Ra te d D C
B lo c k i ng Vo lta g e
M a xi mum The rm a l Re s i s ta nc e ( No te 2 )
O p e ra ti ng J unc ti o n Te mp e ra ture Ra ng e
S to r a g e Te mp e r a tur e Ra ng e
S YM B OL
V
RRM
V
RM S
V
DC
I
F ( AV )
I
F S M
V
F
@ V
R
1 =1 5 V
@ V
R
2 =2 0 V
@ V
R
3 =4 0 V
I
R
R
θJ
L
R
θ
JA
T
J
T
S TG
0.062(1.60)
0.047(1.20)
SX 34L
40
28
40
3 .0
50
0 .3 5
0 .4 5
0 .1 5
1 .0
2 .0
20
75
- 5 5 to + 1 2 5
- 5 5 to + 1 5 0
UNITS
V
V
V
A
A
V
mA
O
C / W
O
C
C
O
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8.0mm
2
(.013mm thick) copper pad areas.
September 1,2010-REV.00
PAGE . 1
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