SVF7N80F datasheet, PDF - EEWORLD Datasheet

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SVF7N80F: DescriptionHigh voltage MOSFET; CategoryDiscrete semiconductor; File Size482KB，8 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SVF7N80F Overview

High voltage MOSFET

Parameters

BVDSS[V]：800

Type：N

VGS[±V]：30

ID[A]：7

VGS(TH)[V]：2～4

RDS(on).Max@VGS=10V[Ω]：1.6

Package：TO-220F-3L

SVF7N80F Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	800V
Continuous drain current (Id) at 25°C	7A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	1.55Ω @ 3.5A,10V
Maximum power dissipation (Ta=25°C)	50W
type	N channel

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SVF7N80T/F

说明书

7A、800V N沟道增强型场效应管

描述

SVF7N80T/F N沟道增强型高压功率MOS场效应晶½管采用

士兰微电子F-Cell

平面高压VDMOS 工艺技术制造。先进的工

艺及条状的原胞设计结构½得该产品具有较½的导通电阻、优越

的开关性½及很高的雪崩击穿耐量。

该产品可广泛应用于

AC-DC

开关电源，DC-DC 电源½换

器，高压

桥

PWM

马达驱动。

1.栅极 2.漏极 3.源极

特点

∗

7A，800V，R

DS(on)(

典型值

)

=1.39Ω@V

=10V

½栅极电荷量

½反向传输电容

开关速度快

提升了

dv/dt

½力

TO-220F-3L

TO-220-3L

½名规则

产品规格分类

产品名称

SVF7N80T

SVF7N80F

封装½式

TO-220-3L

TO-220F-3L

打印名称

SVF7N80T

SVF7N80F

材料

无铅

包装

料管

杭州士兰微电子股½有限公司

Http://www.silan.com.cn

版本号：1.2

2012.06.04

共8页第1页

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