SVF4N65DTR datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> SVF4N65DTR

SVF4N65DTR: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power dissipation (Ta =25°C): 77W Type: N-channel N-channel, 650V, 4A, 2.7Ω@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size314KB，8 Pages; ManufacturerSilan; Websitehttp://www.silanic.com.cn/; Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.

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SVF4N65DTR Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.7Ω @ 2A, 10V Maximum power dissipation (Ta =25°C): 77W Type: N-channel N-channel, 650V, 4A, 2.7Ω@10V

SVF4N65DTR Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	4A
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.7Ω @ 2A,10V
Maximum power dissipation (Ta=25°C)	77W
type	N channel

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士兰微电子

4A、650V N沟道增强型场效应管

描述

SVF4N65CAF/D/M/MJ

说明书

沟道增强型高压功率

MOS

场效应晶½

1.栅极 2.漏极 3.源极

管采用士兰微电子的

F-Cell

平面高压

VDMOS

工艺技术制造。先进

的工艺及条状的原胞设计结构½得该产品具有较½的导通电阻、

优越的

开关性½及很高的雪崩击穿耐量。

该产品可广泛应用于

AC-DC

开关电源，DC-DC 电源½换器，高

压

桥

PWM

马达驱动。

特点



4A，650V，R

DS(on)

（典型值）

=2.3Ω@V

=10V

½栅极电荷量

½反向传输电容

开关速度快

提升了

dv/dt

½力

TO-251J-3L

TO-251D-3L

TO-252-2L

TO-220F-3L

½名规则

S V F X N E X X C A X

士兰F-Cell工艺

VDMOS产品标识

额定电流标识,采用1-2½数字；

例如:4 代表

4A,10

代表

10A,

代表

0.8A

沟道极性标识，N代表N 沟道

封装外½标识。例如：

F:TO-220F-3L; D:TO-252;

M:TO-251D; MJ:TO-251J

版本

额定耐压值，采用2½数字

例如：60表示600V,65表示650V

特殊功½、规格标识，通常省略

例如：E 表示内½了ESD保护结构

产品规格分类

产品名称

SVF4N65CAF

SVF4N65CAD

SVF4N65CADTR

SVF4N65CAM

SVF4N65CAMJ

封装½式

TO-220F-3L

TO-252-2L

TO-251D-3L

TO-251J-3L

打印名称

SVF4N65CAF

SVF4N65CAD

SVF4N65CAM

SVF4N65CAMJ

材料

无卤

包装

料管

编带

料管

杭州士兰微电子股½有限公司

http: //www.silan.com.cn

版本号：1.1

共

页第

页

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