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ST36BF

Description
DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 3A Forward voltage drop (Vf): 500mV @ 3A Taiwan trench chip LOW VF≧0.5
CategoryDiscrete semiconductor    Schottky diode   
File Size210KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
Download Datasheet Parametric View All

ST36BF Overview

DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 3A Forward voltage drop (Vf): 500mV @ 3A Taiwan trench chip LOW VF≧0.5

ST36BF Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)60V
Average rectified current (Io)3A
Forward voltage drop (Vf)500mV @ 3A

ST36BF Preview

Download Datasheet
ST34BF THRU ST310BF
SURFACE MOUNT TRENCH SCHOTTKY RECTIFIER
Reverse Voltage - 40 to 100 Volts
Forward Current - 3.0 Amperes
SMBF
Cathode Band
Top View
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
High efficiency operation
Ultra low forward voltage drop,low power losses
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
ST34BF
40
28
40
ST36BF
60
42
60
3.0
ST310BF
100
70
100
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
80.0
0.41
0.10
20.0
500
68
-55 to +125
0.50
0.03
60.0
0.60
0.02
10.0
A
V
mA
pF
C/W
C
C
-55 to +150
-55 to +150
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
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