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SS16

Description
DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 1A Forward voltage drop (Vf): 700mV @ 1A 60V, 1A
CategoryDiscrete semiconductor    diode   
File Size524KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SS16 Overview

DC reverse withstand voltage (Vr): 60V Average rectified current (Io): 1A Forward voltage drop (Vf): 700mV @ 1A 60V, 1A

SS16 Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY

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Download Datasheet
RoHS
SS12 THRU SS110
Surface Mount Schottky Rectifier
Features
1.0A
I
o
V
RRM
20V-100V
High surge current capability
Cases: Molded plastic
COMPLIANT
Limiting Values (Absolute Maximum Rating)
Item
Repetitive Peak Reverse
Voltage
Average Forward Current
Surge(Non-
repetitive)Forward Current
Junction Temperature
Storage Temperature
Symbol
V
RRM
Unit
V
60HZ Half-sine
wave, Resistance
load, Ta(Fig.1)
60Hz Half-sine
wave ,1 cycle ,
Ta =25℃
-55~+125
-55 ~ +150
Test Conditions
SS12
20
SS13
30
SS14
40
SS15
50
SS16
60
SS19
90
SS110
100
I
F(AV)
A
1.0
I
FSM
T
J
T
STG
A
30
-55~+150
Notes 1. Thermal resistance from junction to ambient mounted on P.C.B. with 5.0 mm x 5.0 mm copper heatsink
1/4
S-S1177
Rev.1.1,09-May-17
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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