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SR22ET/R13

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size103KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SR22ET/R13 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 20V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

SR22ET/R13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeDO-214AC
package instructionROHS COMPLIANT, PLASTIC, SMA, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SR22ET/R13 Preview

Download Datasheet
SR22E~SR26E
MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
• In compliance with EU RoHS 2002/95/EC directives
• ESD Passed devices : Air mode 15KV ,human body mode 8KV
20 to 60 Volts
CURRENT
2.0 Amperes
MECHANICAL DATA
• Case: JEDEC DO-214AC molded plastic
• Terminals:Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard packaging: 12mm tape (EIA-481)
• Weight: 0.0023 ounce, 0.0679 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt TL = 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 2 . 0 A ( N o t e 1 )
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RM S
V
DC
I
F ( AV )
I
F S M
V
F
S R2 2 E
20
14
20
S R2 3 E
30
21
30
.047(1.20)
S R2 4 E
40
28
40
2 .0
50
S R2 5 E
50
35
50
S R2 6 E
60
42
60
U N IT S
V
V
V
A
A
0 .5
0 .2
20
20
75
-5 5 to +1 2 5
0 .7
0 .1
20
O
V
I
R
R
θ
J L
R
θ
J A
T
J
, T
S TG
mA
C / W
O
-5 5 to +1 5 0
C
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8mm
2
(.013mm thick) copper pad areas.
STAD-MAR.25.2009
PAGE . 1
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