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SPP2305W

Description
Trench FET
CategoryDiscrete semiconductor   
File Size206KB,8 Pages
ManufacturerSYNC POWER Crop.
Websitehttp://www.syncpower.com/

KINETICS Co., Ltd. is a professional analog IC design company. It was officially established on February 1, 2004 and moved into Taipei Nangang Software Park (NKSP). KINETICS products are mainly used in power management systems.

Integrating high-tech IC design talents from the United States and Taiwan, KINETICS Inc. is dedicated to the design and development of power management ICs. We also develop and design field-effect power devices such as Trench POWER MOSFET and TVS ESD protection devices to provide customers with more competitive power management system components and effectively protect the safety of electronic products.

KINETICS Technology Co., Ltd. holds several U.S. patents for synchronous rectification power management ICs. Based on these patented technologies, we continue to develop and design more forward-looking and high-performance power management ICs, and keep pace with world-class power management design companies.

QINGLI Technology uses high-density Trench POWER MOSFET process to design products, and adopts the industry's most advanced packaging and the most sophisticated packaging type, which is particularly suitable for handheld electronic product systems.

The TVS ESD protection components of QINGLI Technology are the most advanced packaging type and are adopted by many international system manufacturers. The fine packaging type is particularly suitable for electronic communication products, effectively and precisely protecting the system for safe use.

KINETICS Co., Ltd. provides closer customer service in a synchronous growth mode, allowing customers and KINETICS to achieve a win-win situation in terms of industrial technology and market competition.

In accordance with the provisions of the Recycling and Environmental Protection Act on banned substances, the company develops green products with pollution-free raw materials. The products are inspected and certified by the internationally renowned certification agency SGS and fully comply with the ROHS world environmental protection standards.

In September 2005, KINETIC TECHNOLOGY CO., LTD. passed the AFQA (ISO 9001: 2008) certification.

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SPP2305W Overview

Trench FET

Features

产品名称:溝槽式場效電晶體


Product model: SPP2305W


Product Description:


The SPP2305W is the P-Channel logic enhancement


mode power field effect transistors are produced using


high cell density , DMOS trench technology.


This high density process is especially tailored to


minimize on-state resistance.


These devices are particularly suited for low voltage


application such as cellular phone and notebook


computer power management and other battery powered


circuits, and low in-line power loss are needed in a very


small outline surface mount package.



parameter:


TYPE:P


VDSS:15V


VGS:12V


VTH:min 0.35


Max 0.85


IDS: 3.5A at 25°C


RDS:70mΩ at 4.5V


85mΩ at 2.5V


105mΩ at 1.8V


PD:1.25W


Package: SOT-23


SPP2305W Preview

Download Datasheet
SPP2305W
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2305W is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-15V/-3.5A,R
DS(ON)
= 70mΩ@V
GS
=-4.5V
-15V/-3.0A,R
DS(ON)
= 85mΩ@V
GS
=-2.5V
-15V/-2.0A,R
DS(ON)
=105mΩ@V
GS
=-1.8V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
S05WYW
2011/07/14
Ver.2
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