SPN4412WS8RGB datasheet, PDF - EEWORLD Datasheet

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SPN4412WS8RGB: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size187KB，8 Pages; ManufacturerSYNC POWER Crop.; Websitehttp://www.syncpower.com/; KINETICS Co., Ltd. is a professional analog IC design company. It was officially established on February 1, 2004 and moved into Taipei Nangang Software Park (NKSP). KINETICS products are mainly used in power management systems.

Integrating high-tech IC design talents from the United States and Taiwan, KINETICS Inc. is dedicated to the design and development of power management ICs. We also develop and design field-effect power devices such as Trench POWER MOSFET and TVS ESD protection devices to provide customers with more competitive power management system components and effectively protect the safety of electronic products.

KINETICS Technology Co., Ltd. holds several U.S. patents for synchronous rectification power management ICs. Based on these patented technologies, we continue to develop and design more forward-looking and high-performance power management ICs, and keep pace with world-class power management design companies.

QINGLI Technology uses high-density Trench POWER MOSFET process to design products, and adopts the industry's most advanced packaging and the most sophisticated packaging type, which is particularly suitable for handheld electronic product systems.

The TVS ESD protection components of QINGLI Technology are the most advanced packaging type and are adopted by many international system manufacturers. The fine packaging type is particularly suitable for electronic communication products, effectively and precisely protecting the system for safe use.

KINETICS Co., Ltd. provides closer customer service in a synchronous growth mode, allowing customers and KINETICS to achieve a win-win situation in terms of industrial technology and market competition.

In accordance with the provisions of the Recycling and Environmental Protection Act on banned substances, the company develops green products with pollution-free raw materials. The products are inspected and certified by the internationally renowned certification agency SGS and fully comply with the ROHS world environmental protection standards.

In September 2005, KINETIC TECHNOLOGY CO., LTD. passed the AFQA (ISO 9001: 2008) certification.

Download Datasheet Parametric View All

SPN4412WS8RGB Overview

Transistor

SPN4412WS8RGB Parametric

Parameter Name	Attribute value
Maker	SYNC POWER Crop.
package instruction	,
Reach Compliance Code	compliant

SPN4412WS8RGB Preview

SPN4412W

N-Channel Enhancement Mode MOSFET

DESCRIPTION

The SPN4412W is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application , notebook computer power management and

other battery powered circuits where high-side

switching .

FEATURES

30V/6.0A,R

DS(ON)

= 25mΩ@V

= 10V

30V/4.0A,R

DS(ON)

= 36mΩ@V

= 4.5V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOP – 8P package design

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

PIN CONFIGURATION(SOP – 8P)

PART MARKING

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SPN4412W

N-Channel Enhancement Mode MOSFET

PIN DESCRIPTION

ORDERING INFORMATION

Part Number

SPN4412WS8RGB

Symbol

Description

Source

Gate

Drain

Package

SOP- 8P

Part

Marking

SPN4412W

※

SPN4412WS8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free

ABSOULTE MAXIMUM RATINGS

=25

℃

Unless otherwise noted)

Parameter

Drain-Source Voltage

Gate –Source Voltage

Continuous Drain Current(T

=150

℃

)

Pulsed Drain Current

Continuous Source Current(Diode Conduction)

Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Thermal Resistance-Junction to Ambient

=25℃

=70℃

=25℃

=70℃

Symbol

DSS

GSS

STG

θJA

Typical

±20

Unit

℃

℃/W

6.8

5.6

2.3

2.5

1.6

-55/150

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SPN4412W

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

=25

℃

Unless otherwise noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Symbol

Conditions

Min.

Typ

Max.

Unit

(BR)DSS

=0V,I

=250uA

GS(th)

=250uA

GSS

DSS

D(on)

DS(on)

gfs

iss

oss

rss

d(on)

d(off)

=15V,R

=15Ω

≡1.0A,V

GEN

=10V

=6Ω

=15V

=0V

f=1MHz

=0V,V

=±20V

=24V,V

=0V

=24V,V

=0V

=85℃

≥5V,V

=10V

= 10V,I

=6.0A

=4.5V,I

=4.0A

=15V,I

=6.2A

=2.3A,V

=0V

1.0

2.5

±100

0.018

0.025

0.8

2.5

450

240

0.025

0.036

1.2

Ω

=15V,V

=10V

= 2A

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SPN4412W

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

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SPN4412W

N-Channel Enhancement Mode MOSFET

TYPICAL CHARACTERISTICS

2011/ 05/ 19

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Page 5

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