SMBJ150A datasheet, PDF - EEWORLD Datasheet

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SMBJ150A: DescriptionPolarity: Unidirectional Peak pulse current (10/1000us): 2.5A Clamping voltage: 243V Breakdown voltage (minimum value): 167V Reverse shutdown voltage (typ. value): 150V VBR=167V VC=243V IPP=2.5A unidirectional; CategoryDiscrete semiconductor TVS diode; File Size1MB，5 Pages; ManufacturerFORMOSAMS; Websitehttp://www.formosagr.com/; FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.

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SMBJ150A Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 2.5A Clamping voltage: 243V Breakdown voltage (minimum value): 167V Reverse shutdown voltage (typ. value): 150V VBR=167V VC=243V IPP=2.5A unidirectional

SMBJ150A Parametric

Parameter Name	Attribute value
polarity	Unidirectional
Peak pulse current (10/1000us)	2.5A
clamping voltage	243V
Breakdown voltage (minimum value)	167V
Reverse shutdown voltage (typ)	150V

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SMB/DO-214AA

0.086 (2.20)

0.071 (1.80)

0.155(3.94)

0.130(3.30)

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0.012(0.305)

0.006(0.152)

0.096(2.45)

0.081(2.05)

0.060(1.52)

0.030(0.76)

Dimensions in inches and (millimeters)

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