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SMAJ150CA

Description
极性:Bidirectional 峰值脉冲电流(10/1000us):1.6A 箝位电压:243V 击穿电压(最小值):167V 反向关断电压(典型值):150V
CategoryDiscrete semiconductor    TVS diode   
File Size937KB,4 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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SMAJ150CA Overview

极性:Bidirectional 峰值脉冲电流(10/1000us):1.6A 箝位电压:243V 击穿电压(最小值):167V 反向关断电压(典型值):150V

SMAJ150CA Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)1.6A
clamping voltage243V
Breakdown voltage (minimum value)167V
Reverse shutdown voltage (typ)150V

SMAJ150CA Preview

Download Datasheet
SMAJ5.0 THRU SMAJ170CA
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage: 5.0-170 Volts
Peak pulse power: 400 Watts
FEATURE
DO-214AC/SMA
Optimzed for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2(IEC801-2)
Ideal for EFT protection of data lines in accordance
with IEC1000-4-4(IEC801-2)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated junction
400w peak pulse power capability
Excellent clamping capability
Low incremental surge resistance
Fast response time:typically less than 1.0ps from 0v to
V
(BR)
min
High temperature soldering guaranteed:
250 C/10S at terminals
0.067 (1.70)
0.051 (1.30)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
Dimensions in inches and (millimeters)
Case:
JEDEC DO-214AC molded plastic body over
passivated chip
Terminals:
Solder plated , solderable per MIL-STD 750,
method 2026
Polarity:
Color band denotes cathode except for
bidirectional types
Mounting Position:
Any
Weight:
0.002 ounce, 0.053 grams
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bidirectional use suffix C or CA for types SMAJ5.0 thru SMAJ170 (e.g. SMAJ5.0C,SMAJ170CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
SYMBOLS
Peak pulse power dissipation with a 10/1000µs wavetorm(NOTE 1,2,5,FIG.1)
Peak forward surge current
(Note 4)
Peak pulse current with a 10/1000µs waveform(NOTE 1)
Steady state power dissapation (Note 3)
Maximum instantaneous forward voltage at 25A(Note 4)
Operating junction and storage temperature range
Notes:
1.Non-repetitive current pulse,per Fig.3 and derated above T
A
=25 C per Fig.2
2.Mounted on 5.0mm
2
copper pads to each terminal
3.Lead temperature at T
L
=75 C per Fig.5
4.Measured on 8.3ms single half sine-wine.For uni-directional devices only.
5.Peak pulse power waveform is 10/1000µs
P
PPM
I
FSM
I
PPM
P
M(AV)
V
F
T
STG
,T
J
VALUE
Minimum 400
40.0
See Table 1
1.0
3.5
-55 to + 150
UNITS
Watts
Amps
Amps
Watts
Volts
C
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