SL40T65FL datasheet, PDF - EEWORLD Datasheet

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SL40T65FL: DescriptionCollector current (Ic) (max): 80A Collector-emitter breakdown voltage (max): 650V Type: - Vce (on) at different Vge, Ic: 2.4V @ 15V, 40A Gate threshold voltage - VGE (th): 6V @ 580uA; CategoryDiscrete semiconductor IGBT tube; File Size2MB，9 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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SL40T65FL Overview

Collector current (Ic) (max): 80A Collector-emitter breakdown voltage (max): 650V Type: - Vce (on) at different Vge, Ic: 2.4V @ 15V, 40A Gate threshold voltage - VGE (th): 6V @ 580uA

SL40T65FL Parametric

Parameter Name	Attribute value
Collector current (Ic) (maximum value)	80A
Collector-emitter breakdown voltage (maximum value)	650V
type	-
Vce (on) when different Vge, Ic	2.4V @ 15V,40A
Gate threshold voltage-VGE(th)	6V @ 580uA

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