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SL2302

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.8A Gate-source threshold voltage: 950mV @ 50uA Drain-source on-resistance: 35mΩ @ 3.6A, 4.5V Maximum power dissipation (Ta=25°C): 400mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size369KB,6 Pages
ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.
Websitehttp://www.slkormicro.com/

Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

Download Datasheet Parametric View All

SL2302 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.8A Gate-source threshold voltage: 950mV @ 50uA Drain-source on-resistance: 35mΩ @ 3.6A, 4.5V Maximum power dissipation (Ta=25°C): 400mW Type: N-channel

SL2302 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C2.8A
Gate-source threshold voltage950mV @ 50uA
Drain-source on-resistance35mΩ @ 3.6A,4.5V
Maximum power dissipation (Ta=25°C)400mW
typeN channel

SL2302 Preview

Download Datasheet
SL2302
N-Channel
Power MOSFET
General Features
V
DS
= 20V,I
D
= 2.8 A
R
DS(ON)
< 85mΩ @ V
GS
=2.5V
R
DS(ON)
< 45mΩ @ V
GS
=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
A2
Application
DC/DC Converter
Load switch
Marking and pin assignment
SOT-23 top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
20
±12
2.8
12
0.4
-55 To 150
Unit
V
V
A
A
W
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
312.5
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
20
-
-
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
www.slkormicro.com
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