SL11P06D datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> SL11P06D

SL11P06D: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 180mΩ @ 3A, 10V Maximum power consumption Dispersion (Ta=25°C): 15.6W(Tc) Type: P-channel -; CategoryDiscrete semiconductor MOS (field effect tube); File Size507KB，5 Pages; ManufacturerShenzhen SLKOR Micro Semicon Co., Ltd.; Websitehttp://www.slkormicro.com/; Shenzhen SlkorMicro Semicon Co., Ltd. is dedicated to the 3rd-generation semiconductor SiC power devices. Our products cover discrete devices and ICs, diodes, transistors, power devices, and power management chips. Our brand "Slkor" is gaining reputations in the semiconductor industry. We offer varieties of products ranging from industrial to military applications, SiC diodes, SiC MOSFET, IGBT, the 5th generation ultra-fast recovery power diodes, and more. These products are vitally applied in electric vehicles, high-end equipment, communication equipment, and more.

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SL11P06D Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 11A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 180mΩ @ 3A, 10V Maximum power consumption Dispersion (Ta=25°C): 15.6W(Tc) Type: P-channel -

SL11P06D Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	11A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	180mΩ @ 3A,10V
Maximum power dissipation (Ta=25°C)	15.6W(Tc)
type	P channel

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