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SI2301

Description
Drain-source voltage (Vdss): 10V Continuous drain current (Id) (at 25°C): 2.2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 120mΩ @ 1A, 4.5V Maximum power dissipation ( Ta=25°C): 1.25W Type: P-channel 10V P-channel enhancement MOS field effect transistor
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size203KB,3 Pages
ManufacturerFine Made Electronics Group Co., Ltd.
Websitehttp://www.superchip.cn/index.aspx
Shenzhen Fuman Electronics Group Co., Ltd. was founded in 2001. It is a national high-tech enterprise engaged in the design, development, packaging, testing and sales of high-performance analog and mixed-signal integrated circuits. It currently has more than 400 IC products in the consumer field, including power management, LED driver, MOSFET, etc.
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SI2301 Overview

Drain-source voltage (Vdss): 10V Continuous drain current (Id) (at 25°C): 2.2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 120mΩ @ 1A, 4.5V Maximum power dissipation ( Ta=25°C): 1.25W Type: P-channel 10V P-channel enhancement MOS field effect transistor

SI2301 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)10V
Continuous drain current (Id) at 25°C2.2A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance120mΩ @ 1A,4.5V
Maximum power dissipation (Ta=25°C)1.25W
typeP channel

SI2301 Preview

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此文档权利由FM富满享有,您也可访问FM富满官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
深圳市富满电子集团股½有限公司
SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
2301
(文件编号:S&CIC1596)
10V P
沟道增强型
MOS
场效应管
VDS= -10V
RDS(ON), Vgs@-4.5V, Ids@-1.0A =100mΩ@TYP
RDS(ON), Vgs@-2.5V, Ids@-0.5A = 125mΩ@TYP
一、特点
高级的加工技术
极½的导通电阻高密度的单元设计
SOT- 23
内部结构示意图
二、最大额定值和热特性
(T
A
= 25℃,除非另有说明)
参数
漏源电压
栅源电压
漏极电流
漏极脉冲电流
最大功耗
工½结温和存储温度范围
结环热阻(PCB 安装)
T
A
=25℃
T
A
=75℃
符号
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
-10
±10
-2.2
-5
1.25
0.8
-55 to 150
140
单½
V
A
W
W/℃
www.superchip.cn
1
页 共
3
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